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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Screen Default Ranking Price By Date
Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
International RectifierIGBT DESCRETE SWITCHBulk--*-
Infineon TechnologiesIGBT 600V 62A TO-247ACTubeTO-247ACThrough HoleCooliRIGBT™-55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V 60A TO-247ACBulk,TubeTO-247ACThrough Hole--55°C ~ 175°C (TJ)
International RectifierIGBT TRENCH 600V 60A TO-247ACBulkTO-247ACThrough Hole--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH 600V 240A TO274-903TubePG-TO274-3-903Through Hole--55°C ~ 175°C (TJ)
International RectifierIGBT TRENCH 600V 240A TO274-3BulkPG-TO274-3-903Through Hole--55°C ~ 175°C (TJ)
International RectifierIGBT TRENCH 600V 12A TO-252AABulkTO-252AASurface Mount--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH 600V 12A TO-252AATape & Reel (TR)TO-252AASurface Mount--55°C ~ 175°C (TJ)
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