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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microchip TechnologyPM-IGBT-TFS-SP3FBulk-Chassis Mount--40°C ~ 175°C (TJ)
Microchip TechnologyPM-IGBT-TFS-SP3FBulk-Chassis Mount--40°C ~ 175°C (TJ)
Microchip TechnologyPM-IGBT-TFS-SP6PBulk-Chassis Mount--40°C ~ 175°C (TJ)
Microchip TechnologyPM-IGBT-TFS-D4Bulk-Chassis Mount--40°C ~ 175°C (TJ)
Microchip TechnologyPM-IGBT-TFS-D4Bulk-Chassis Mount--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBTBulk--*-
Infineon TechnologiesIGBT 600V 34A 100W D2PAKTape & Reel (TR),Cut Tape (CT)D2PAKSurface Mount--55°C ~ 150°C (TJ)
International RectifierIGBT 600V 23A D2PAKBulkD2PAKSurface Mount--55°C ~ 150°C (TJ)
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