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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FZ750R65KE3NOSA1 $2,066.90 | Infineon Technologies | IGBT MOD 6500V 750A A-IHV190-6 | Tray | Module | Chassis Mount | - | -50°C ~ 125°C |
![]() FZ750R65KE3P2NOSA1 $2,083.48 | Infineon Technologies | IHV IHM T | Tray | A-IHV190-6 | Chassis Mount | - | -50°C ~ 125°C (TJ) |
| Infineon Technologies | IGBT MOD 1200V 800A 3550W | Tray | Module | Chassis Mount | C | -40°C ~ 125°C (TJ) | |
![]() FZ800R12KF5NOSA1 $507.05 | Infineon Technologies | IGBT MODULE | Bulk | - | - | * | - |
![]() FZ800R12KL4CNOSA1 $576.64 | Infineon Technologies | IGBT MODULE | Bulk | - | Chassis Mount | - | -40°C ~ 125°C (TJ) |
| Infineon Technologies | IGBT MOD 1200V 1200A 7600W | Tray | Module | Chassis Mount | - | -40°C ~ 125°C | |
![]() FZ800R17KF4CNOSA1 $632.88 | Infineon Technologies | IGBT MODULE | Bulk | - | - | * | - |
![]() FZ800R17KF6CB2NOSA1 $632.88 | Infineon Technologies | FZ800R17 - INSULATED GATE BIPOLA | Bulk | - | - | * | - |
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