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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
STMicroelectronicsIGBTBulk-Surface MountECOPACK®-55°C ~ 175°C (TJ)
Microchip TechnologyIGBT 700V 3.5A TO252Tape & Reel (TR)TO-252 (DPAK)Surface Mount--55°C ~ 150°C (TJ)
SemiQIGBT NPT/TRENCH 1200V 30A TO-3PNTubeTO-3PNThrough Hole--55°C ~ 150°C (TJ)
SemiQIGBT TRENCH FS 1350V 40A TO-3PNTubeTO-3PNThrough Hole--55°C ~ 150°C (TJ)
SemiQIGBT NPT/TRENCH 1200V 50A TO-3PNTubeTO-3PNThrough Hole--55°C ~ 150°C (TJ)
SemiQIGBT TRENCH FS 1350V 60A TO-3PNTubeTO-3PNThrough Hole--55°C ~ 150°C (TJ)
SemiQIGBT TRENCH FS 1200V 80A TO-264TubeTO-264Through Hole--55°C ~ 150°C (TJ)
SemiQIGBT NPT/TRENCH 1200V 80A TO-264TubeTO-264Through Hole--55°C ~ 150°C (TJ)
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