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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | IGBT MODULE 1200V AIHM130-2 | Tray | - | - | - | - | |
![]() FZ900R12KP4HOSA1 $116.84 | Infineon Technologies | IGBT MODULE 1200V 900A | Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
![]() GA200SA60S $20.36 | Vishay General Semiconductor - Diodes Division | IGBT MOD 600V 200A 630W SOT227B | - | SOT-227B | Chassis Mount | - | -55°C ~ 150°C (TJ) |
![]() GA200SA60U $23.07 | Vishay General Semiconductor - Diodes Division | IGBT MOD 600V 200A 500W SOT227B | - | SOT-227B | Chassis Mount | - | -55°C ~ 150°C (TJ) |
![]() GA35XCP12-247 $20.15 | GeneSiC Semiconductor | IGBT PT 1200V TO-247AB | Tube | TO-247AB | Through Hole | - | -40°C ~ 150°C (TJ) |
![]() GA400TD25S $125.65 | Vishay General Semiconductor - Diodes Division | IGBT MOD 250V 400A INT-A-PAK | Tube | Dual INT-A-PAK | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() GB100XCP12-227 $153.00 | GeneSiC Semiconductor | IGBT MODULE 1200V 100A SOT227 | Bulk | SOT-227 | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() GB35XF120K $50.01 | Vishay General Semiconductor - Diodes Division | IGBT MODULE 1200V 50A 284W | - | - | Chassis Mount | - | 150°C (TJ) |
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