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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | IGBT MODULE 3300V 1A 9600W | Tray | - | Chassis Mount | - | -40°C ~ 125°C | |
| Infineon Technologies | IGBT MOD 3300V 1300A 9600W | Tray | Module | Chassis Mount | - | -40°C ~ 125°C | |
| Infineon Technologies | IGBT MODULE 3300V 1A 9600W | Tray | - | Chassis Mount | - | -40°C ~ 125°C | |
| Infineon Technologies | IGBT MODULE 3300V 1A 9600W | Tray | - | Chassis Mount | - | -40°C ~ 125°C | |
![]() FZ800R33KL2CNOSA1 $828.32 | Infineon Technologies | IGBT MOD 3300V 1500A 9800W | Tray,Tray | Module | Chassis Mount | - | -40°C ~ 125°C (TJ) |
![]() FZ800R45KL3B5NOSA2 $1,375.59 | Infineon Technologies | IGBT MOD 4500V 1600A 9000W | Bulk,Tray | Module | Chassis Mount | - | -50°C ~ 125°C |
![]() FZ825R33HE4DBPSA1 $959.31 | Infineon Technologies | HV B SINGLE SWITCH POWER MODULES | Tray | AG-IHVB130-3 | Chassis Mount | IHM-B | -40°C ~ 150°C (TJ) |
![]() FZ900R12KE4HOSA1 $132.37 | Infineon Technologies | IGBT MOD 1200V 900A 4300W | Tray | Module | Chassis Mount | C | -40°C ~ 150°C (TJ) |
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