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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
SemiQIGBT NPT/TRENCH 1000V 60A TO-264TubeTO-264Through Hole--55°C ~ 150°C (TJ)
SemiQIGBT TRENCH FS 600V 120A TO-3PNTubeTO-3PNThrough Hole--55°C ~ 150°C (TJ)
SemiQIGBT TRENCH FS 600V 80A TO-3PNTubeTO-3PNThrough Hole--55°C ~ 150°C (TJ)
SanRex CorporationIGBT MODULE 100A SINGLE 600V LOWTubeSOT-227Chassis Mount--40°C ~ 150°C (TJ)
SanRex CorporationIGBT MODULE 75A SINGLE 1200V HIGTubeSOT-227Chassis Mount--40°C ~ 150°C (TJ)
SemiQIGBT MOD 1200V 160A 1710WBulkModuleChassis MountAmp+™-40°C ~ 150°C
SemiQIGBT MOD 1200V 170A 650WBulkModuleChassis Mount--40°C ~ 150°C (TJ)
SemiQIGBT MOD 1200V 200A 640WBulkModuleChassis MountAmp+™-40°C ~ 150°C
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