IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select products	Mfr	Description	Package	Supplier Device Package	Mounting Type	Series	Operating Temperature
GSID600A120S4B1	SemiQ	IGBT MOD 1200V 1130A 3060W	Bulk	Module	Chassis Mount	Amp+™	-40°C ~ 150°C
GT10G131(TE12L,Q)	Toshiba Semiconductor and Storage	IGBT 400V 1W 8-SOIC	Tape & Reel (TR)	8-SOP (5.5x6.0)	Surface Mount	-	150°C (TJ)
GT10J312(Q)	Toshiba Semiconductor and Storage	IGBT 600V 10A 60W TO220SM	Tube	-	Through Hole	-	150°C (TJ)
GT15J341,S4X $2.49	Toshiba Semiconductor and Storage	IGBT 600V 15A TO-220SIS	Tube	TO-220SIS	Through Hole	-	150°C (TJ)
GT20J341,S4X(S $2.74	Toshiba Semiconductor and Storage	IGBT 600V 20A TO-220SIS	Tube	TO-220SIS	Through Hole	-	150°C (TJ)
GT20N135SRA,S1E $4.40	Toshiba Semiconductor and Storage	IGBT 1350V 40A TO-247	Tube	TO-247	Through Hole	-	175°C (TJ)
GT30J121(Q) $3.60	Toshiba Semiconductor and Storage	IGBT 600V 30A 170W TO3PN	Tube	TO-3P(N)	Through Hole	-	-
GT30J341,Q $1.75	Toshiba Semiconductor and Storage	IGBT 600V 59A TO-3P	Tray	TO-3P(N)	Through Hole	-	175°C (TJ)