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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Microsemi Corporation | MOSFET N-CH 100V 3.5A TO39 | Bulk | TO-39 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Microsemi Corporation | MOSFET N-CH 100V 3.5A 18ULCC | Bulk | 18-ULCC (9.14x7.49) | Surface Mount | - | -55°C ~ 150°C (TJ) | |
| Microsemi Corporation | MOSFET N-CH 200V 2.25A TO39 | Bulk | TO-39 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() 2N6787 $2.87 | International Rectifier | POWER FIELD-EFFECT TRANSISTOR, N | Bulk | TO-205AF (TO-39) | Through Hole | - | - |
| Microsemi Corporation | MOSFET N-CH 100V 6A TO39 | Bulk | TO-39 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Microsemi Corporation | MOSFET N-CH 200V 3.5A TO39 | Bulk | TO-39 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() 2N6792 $1.28 | Harris Corporation | N-CHANNEL POWER MOSFET | Bulk | TO-205AF (TO-39) | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() 2N6792TX $6.81 | Harris Corporation | 2A, 400V, 1.8OHM, N-CHANNEL | Bulk | TO-205AF (TO-39) | Through Hole | - | -55°C ~ 150°C (TJ) |

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