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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() AFGHL50T65SQ $4.61 | onsemi | IGBT TRENCH FS 650V 80A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() AFGHL50T65SQD $5.53 | onsemi | IGBT TRENCH FS 650V 80A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() AFGHL50T65SQDC $9.91 | onsemi | IGBT FIELD STOP 650V 100A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() AFGHL75T65SQ $5.56 | onsemi | IGBT TRENCH FS 650V 80A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() AFGHL75T65SQD $6.78 | onsemi | IGBT TRENCH FS 650V 80A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() AFGHL75T65SQDC $6.76 | onsemi | IGBT TRENCH FS 650V 80A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() AFGHL75T65SQDT $6.49 | onsemi | IGBT TRENCH FS 650V 80A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() AFGY100T65SPD $10.59 | onsemi | IGBT TRENCH FS 650V 120A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |

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