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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT TRENCH FS 650V 160A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 650V 240A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 650V 240A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT NPT 650V 15A TO263-3-2Tape & Reel (TR),Cut Tape (CT)PG-TO263-3-2Surface Mount--
Infineon TechnologiesIGBT NPT 650V 30A TO263-3-2Tape & Reel (TR),Cut Tape (CT)PG-TO263-3-2Surface MountTrenchstop™ 5-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT NPT 650V 30A TO263-3-2Tape & Reel (TR),Cut Tape (CT)PG-TO263-3-2Surface Mount--
Infineon TechnologiesIGBT NPT 650V 30A TO263-3-2Tape & Reel (TR),Cut Tape (CT)PG-TO263-3-2Surface Mount--
Infineon TechnologiesIGBT NPT 650V 40A TO263-3-2Tape & Reel (TR),Cut Tape (CT)PG-TO263-3-2Surface Mount--
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