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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IRF7331TRPBF $0.76 | Infineon Technologies | MOSFET 2N-CH 20V 7A 8SO | Tape & Reel (TR),Cut Tape (CT) | 8-SO | Surface Mount | HEXFET® | -55°C ~ 150°C (TJ) |
| Infineon Technologies | MOSFET 2N-CH 20V 7A 8SOIC | Tape & Reel (TR) | 8-SOIC | Surface Mount | HEXFET® | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | MOSFET 2N-CH 30V 10A 14SOIC | Tape & Reel (TR) | 14-SOIC | Surface Mount | FETKY™ | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | MOSFET N/P-CH 12V 6.3A/3A 8SO | Tube | 8-SO | Surface Mount | HEXFET® | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | MOSFET N/P-CH 12V 6.3A/3A 8SO | Tape & Reel (TR) | 8-SO | Surface Mount | HEXFET® | -55°C ~ 150°C (TJ) | |
![]() IRF7341GTRPBF $1.92 | Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8SO | Tape & Reel (TR),Cut Tape (CT) | 8-SO | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) |
| Infineon Technologies | MOSFET 2N-CH 55V 4.7A 8SO | Tube | 8-SO | Surface Mount | HEXFET® | -55°C ~ 150°C (TJ) | |
![]() IRF7341QTRPBF $1.03 | Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8SO | Cut Tape (CT) | 8-SO | Surface Mount | - | - |