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Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | MOSFET 2N-CH 30V 6.9A 8SOIC | Tape & Reel (TR) | 8-SOIC | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET 2P-CH 30V 8SOIC | Tube | 8-SOIC | Surface Mount | HEXFET® | -55°C ~ 150°C (TJ) | |
![]() AUIRF7316QTR $3.62 | Infineon Technologies | MOSFET 2P-CH 30V 8SOIC | Tape & Reel (TR),Cut Tape (CT) | 8-SOIC | Surface Mount | HEXFET® | -55°C ~ 150°C (TJ) |
| Infineon Technologies | MOSFET N/P-CH 30V 6.5A 8SOIC | Tube | 8-SOIC | Surface Mount | HEXFET® | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | MOSFET N/P-CH 30V 6.5A 8SOIC | Tape & Reel (TR) | 8-SOIC | Surface Mount | HEXFET® | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8SOIC | Tube | 8-SOIC | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8SOIC | Tape & Reel (TR) | 8-SOIC | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET 2P-CH 55V 3.4A 8SOIC | Tube | 8-SOIC | Surface Mount | HEXFET® | -55°C ~ 150°C (TJ) |
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