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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() AIGB30N65H5ATMA1 $4.14 | Infineon Technologies | IGBT NPT 650V 30A TO263-3-2 | Tape & Reel (TR),Cut Tape (CT) | PG-TO263-3-2 | Surface Mount | - | - |
![]() AIGB40N65F5ATMA1 $4.40 | Infineon Technologies | IGBT NPT 650V 40A TO263-3-2 | Tape & Reel (TR),Cut Tape (CT) | PG-TO263-3-2 | Surface Mount | - | - |
![]() AIGB40N65H5ATMA1 $4.40 | Infineon Technologies | IGBT NPT 650V 40A TO263-3-2 | Tape & Reel (TR),Cut Tape (CT) | PG-TO263-3-2 | Surface Mount | - | - |
![]() AIGB50N65F5ATMA1 $5.07 | Infineon Technologies | IGBT NPT 650V 50A TO263-3-2 | Tape & Reel (TR),Cut Tape (CT) | PG-TO263-3-2 | Surface Mount | - | - |
![]() AIGB50N65H5ATMA1 $5.07 | Infineon Technologies | IGBT NPT 650V 50A TO263-3-2 | Tape & Reel (TR),Cut Tape (CT) | PG-TO263-3-2 | Surface Mount | - | - |
![]() AIGW40N65F5XKSA1 $5.07 | Infineon Technologies | IGBT TRENCH 650V 74A TO247-3-41 | Tube | PG-TO247-3-41 | Through Hole | Trenchstop™ 5 | -40°C ~ 175°C (TJ) |
![]() AIGW40N65H5XKSA1 $5.07 | Infineon Technologies | IGBT TRENCH 650V 74A TO247-3-41 | Bulk,Tube | PG-TO247-3-41 | Through Hole | Trenchstop™ 5 | -40°C ~ 175°C (TJ) |
![]() AIGW50N65F5XKSA1 $5.64 | Infineon Technologies | IGBT TRENCH 650V TO247-3-41 | Tube | PG-TO247-3-41 | Through Hole | Trenchstop™ 5 | -40°C ~ 175°C (TJ) |
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