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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FF200R17KE4PHPSA1 $81.35 | Infineon Technologies | MEDIUM POWER 62MM | Tray | AG-62MMHB | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() FF200R33KF2CNOSA1 $923.47 | Infineon Technologies | IGBT MOD 3300V 330A 2200W | Bulk,Bulk | Module | Chassis Mount | - | -40°C ~ 125°C |
![]() FF225R12ME3BOSA1 $115.38 | Infineon Technologies | IGBT MOD 1200V 325A 1150W | Bulk,Tray | Module | Chassis Mount | EconoDUAL™ | -40°C ~ 125°C |
| Infineon Technologies | IGBT MOD 1200V 320A 1050W | Bulk | Module | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 150°C | |
![]() FF225R12ME4B11BPSA2 $73.81 | Infineon Technologies | MEDIUM POWER ECONO AG-ECONOD-411 | Tray | AG-ECONOD | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 150°C (TJ) |
![]() FF225R12ME4BOSA1 $88.56 | Infineon Technologies | IGBT MOD 1200V 320A 1050W | Tray | Module | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 150°C |
![]() FF225R12ME4PB11BPSA1 $79.97 | Infineon Technologies | IGBT MOD 1200V 450A 20MW | Tray | Module | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 150°C |
![]() FF225R12ME4PBPSA1 $87.32 | Infineon Technologies | IGBT MOD 1200V 450A 20MW | Bulk,Tray | Module | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 150°C (TJ) |
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