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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FF1800XTR17T2P5PBPSA1 $959.69 | Infineon Technologies | XHP LV | Tray | Module | Chassis Mount | XHP™2 | -40°C ~ 175°C (TJ) |
![]() FF200R06KE3HOSA1 $83.44 | Infineon Technologies | IGBT MOD 600V 260A 680W | Bulk,Tray | Module | Chassis Mount | C | -40°C ~ 150°C (TJ) |
![]() FF200R12KE3B2HOSA1 $100.18 | Infineon Technologies | IGBT MOD 1200V 295A 1050W | Tray | Module | Chassis Mount | - | -40°C ~ 125°C |
![]() FF200R12KE3HOSA1 $93.33 | Infineon Technologies | MEDIUM POWER 62MM | Bulk | - | - | * | - |
![]() FF200R12KE4HOSA1 $75.57 | Infineon Technologies | IGBT MOD 1200V 240A 1100W | Tray | Module | Chassis Mount | C | -40°C ~ 150°C (TJ) |
![]() FF200R12KE4PHOSA1 $64.69 | Infineon Technologies | IGBT MODULE 1200V 200A | Tray | Module | Chassis Mount | C | -40°C ~ 150°C |
![]() FF200R12KS4HOSA1 $117.45 | Infineon Technologies | IGBT MOD 1200V 275A 1400W | Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
![]() FF200R12KS4PHOSA1 $121.99 | Infineon Technologies | IGBT MOD 1200V 275A 1400W | Tray | Module | Chassis Mount | - | -40°C ~ 125°C |
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