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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FF150R12KT3GHOSA1 $92.07 | Infineon Technologies | IGBT MOD 1200V 225A 780W | Bulk,Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
![]() FF150R12ME3GBOSA1 $102.89 | Infineon Technologies | IGBT MOD 1200V 200A 695W | Bulk,Tray | Module | Chassis Mount | EconoDUAL™ | -40°C ~ 125°C |
![]() FF150R12MS4GBOSA1 $123.59 | Infineon Technologies | IGBT MOD 1200V 225A 1250W | Tray | Module | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 125°C |
![]() FF150R12RT4HOSA1 $89.25 | Infineon Technologies | IGBT MOD 1200V 150A 790W | Tray | Module | Chassis Mount | C | -40°C ~ 150°C (TJ) |
![]() FF150R12W2T7EB11BPSA1 $38.98 | Infineon Technologies | FF150R12W2T7EB11BPSA1 | Tray | - | - | - | - |
| Infineon Technologies | IGBT MOD 1200V 200A 625W | Tray | Module | Chassis Mount | - | -40°C ~ 125°C | |
![]() FF150R17KE4HOSA1 $82.47 | Infineon Technologies | MODULE IGBT 1700V AG-62MM-1 | Tray | Module | Chassis Mount | C | -40°C ~ 150°C (TJ) |
![]() FF150R17ME3GBOSA1 $108.07 | Infineon Technologies | IGBT MOD 1700V 240A 1050W | Bulk,Tray | Module | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 125°C |
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