SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FF1200R17IP5PBPSA1 $523.69 | Infineon Technologies | IGBT | Bulk,Tray | Module | Chassis Mount | PrimePack™2 | -40°C ~ 175°C (TJ) |
| Infineon Technologies | IGBT MODULE 1700V 1200A | Tray | A-IHV130-3 | Chassis Mount | IHM-B | -40°C ~ 125°C (TJ) | |
![]() FF1200R17KE3NOSA1 $902.70 | Infineon Technologies | IGBT MODULE VCES 1700V 1200A | Tray | Module | Chassis Mount | - | -40°C ~ 125°C |
![]() FF1200R17KP4B2NOSA2 $975.05 | Infineon Technologies | IGBT MODULE 1700V 1200A | Tray | AG-PRIME2 | Chassis Mount | IHM-B | -40°C ~ 150°C (TJ) |
![]() FF1200XTR17T2P5BPSA1 $797.63 | Infineon Technologies | XHP LV | Tray | Module | Chassis Mount | XHP™2 | -40°C ~ 175°C (TJ) |
![]() FF1200XTR17T2P5PBPSA1 $816.69 | Infineon Technologies | XHP LV | Tray | Module | Chassis Mount | XHP™2 | -40°C ~ 175°C (TJ) |
![]() FF1400R12IP4B60BOSA1 $540.47 | Infineon Technologies | PP IHM I | Tray | - | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() FF1400R12IP4BOSA1 $539.38 | Infineon Technologies | IGBT MODULE 1200V 1400A | Tray | Module | Chassis Mount | PrimePACK™3 | -40°C ~ 150°C |
FII40-06DView Product
STGSH50M120DView Product
APT80GP60B2GView Product
FMG1G300US60HEView Product
FII24N17AH1View Product
IXGC12N60CD1View Product
IXXH75N60B3View Product
IXA40RG1200DHG-TUBView Product
CM200DU-24NFHView Product
APTGT100DA120T1GView Product
HGTP12N60C3DView Product
NXH600B100H4Q2F2S1GView Product
Choose a rocker switch by AC/DC ratings, contact arrangement, illumination, panel fit and sealing. Get practical checks for engineering and component sourcing.
Read MoreMay 4, 2026 — The global power semiconductor market is grappling with a worsening supply crunch, as lead times for key components have extended…
Read More
Munich, Germany – May 26, 2026 – Power semiconductor and automotive chip giant Infineon Technologies AG has formally notified customers worldwide of a second…
Read More
Compare Pt100 and Pt1000 RTDs, two-, three- and four-wire connections, excitation and self-heating. Build an error budget from element to reported temperature.
Read More
Every audio power amplifier design starts with the same fundamental challenge: converting a low-voltage line-level signal into the high-current drive required by a reactive…
Read MoreSeptember 16, 2026 – Global — Leading semiconductor manufacturer ON Semiconductor (onsemi, NASDAQ: ON) has officially issued a formal price adjustment letter to global…
Read More
The rapid advancement of artificial intelligence (AI) is transforming industries across the globe, and the world of electronic components is no exception. From smarter…
Read More
See when an inductor behaves linearly, how DC bias and saturation reduce inductance, and which current and temperature curves to check.
Read More
Learn what an IMU measures, how accelerometers and gyroscopes work together, why orientation estimates drift, and what to compare.
Read More
See how a MEMS gyroscope measures angular rate, why its angle estimate drifts, and which range, noise, interface and temperature specs to compare.
Read More
In an era dominated by AI accelerators with terabytes of HBM memory and consumer devices racing toward LPDDR5X bandwidth, it’s easy to wonder: why…
Read More
On September 22nd, it was reported that Samsung Electronics, the South Korean tech giant, had successfully passed NVIDIA’s certification test for its 12-layer HBM3E…
Read More