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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FD800R17KE3B2NOSA1 $897.64 | Infineon Technologies | IGBT MODULE 1700V 800A | Bulk,Tray | Module | Chassis Mount | IHM-B | -40°C ~ 125°C (TJ) |
| Infineon Technologies | IGBT MODULE 1700V 800A | Tray | - | Chassis Mount | IHM-B | -40°C ~ 125°C (TJ) | |
| Infineon Technologies | IGBT MODULE 3300V 9600W | Bulk | Module | Chassis Mount | IHM-A | -40°C ~ 125°C | |
| Infineon Technologies | IGBT MODULE 3300V 9600W | Bulk | Module | Chassis Mount | - | -40°C ~ 125°C | |
![]() FD800R45KL3KB5NPSA1 $1,836.51 | Infineon Technologies | IGBT MOD 4500V 800A 9000W | Tray | Module | Chassis Mount | - | -50°C ~ 125°C |
![]() FD900R12IP4DBOSA1 $141.67 | Infineon Technologies | IGBT MOD 1200V 900A 5100W | Tray,Tray | Module | Chassis Mount | PrimePACK™2 | -40°C ~ 150°C |
![]() FD900R12IP4DVBOSA1 $393.18 | Infineon Technologies | IGBT MOD 1200V 900A 5100W | Bulk,Tray | Module | Chassis Mount | PrimePACK™2 | -40°C ~ 150°C |
![]() FDDF80R12W1H3B52BOMA1 $24.03 | Infineon Technologies | IGBT MODULE | Bulk | - | - | * | - |
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