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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FD300R07PE4B6BOSA1 $101.12 | Infineon Technologies | IGBT MOD 650V 300A 940W | Bulk,Tray | Module | Chassis Mount | EconoPACK™ 4 | -40°C ~ 150°C |
![]() FD300R12KE3HOSA1 $109.37 | Infineon Technologies | IGBT MOD 1200V 480A 1470W | Tray | Module | Chassis Mount | - | -40°C ~ 125°C |
![]() FD300R12KS4B5HOSA1 $114.62 | Infineon Technologies | IGBT MOD 1200V 370A 1950W | Bulk,Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
![]() FD300R12KS4HOSA1 $114.62 | Infineon Technologies | IGBT MOD 1200V 370A 1950W | Bulk,Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
![]() FD300R17KE4HPSA1 $123.24 | Infineon Technologies | MEDIUM POWER 62MM | Tray | - | - | - | - |
![]() FD300R17KE4PHOSA1 $126.79 | Infineon Technologies | IGBT MODULE 1700V 300A AG62MM-1 | Tray | AG-62MM-1 | Chassis Mount | C | -40°C ~ 150°C |
![]() FD400R07PE4RB6BOSA1 $132.72 | Infineon Technologies | IGBT MOD 650V 460A 1150W | Bulk,Bulk | Module | Chassis Mount | - | -40°C ~ 150°C |
![]() FD400R12KE3B5HOSA1 $127.48 | Infineon Technologies | IGBT MOD 1200V 580A 2000W | Bulk,Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
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STGB20H65FB2View Product
IXA40PG1200DHG-TRRView Product
DF900R12IP4DBOSA1View Product
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FF300R12KE3HOSA1View Product
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