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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FD16001200R17HP4KB2BOSA1 $1,190.82 | Infineon Technologies | IGBT MOD 1700V 1600A 1050W | Bulk,Tray | Module | Chassis Mount | IHM-B | -40°C ~ 150°C (TJ) |
![]() FD16001200R17KF6CB2NOSA1 $1,335.25 | Infineon Technologies | IGBT MODULE | Bulk | AG-ECONO2B | Chassis Mount | - | -40°C ~ 125°C (TJ) |
![]() FD200R12KE3HOSA1 $90.85 | Infineon Technologies | IGBT MODULE 1200V 1050W | Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
![]() FD200R12KE3PHOSA1 $80.54 | Infineon Technologies | IGBT MODULE 1200V 200A | Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
![]() FD200R12PT4B6BOSA1 $132.34 | Infineon Technologies | IGBT MOD 1200V 300A 1100W | Bulk,Tray | Module | Chassis Mount | EconoPACK™ 4 | -40°C ~ 150°C |
![]() FD200R65KF2-K $1,610.61 | Infineon Technologies | IGBT MODULE | Bulk | - | Chassis Mount | - | 125°C (TJ) |
![]() FD250R65KE3KNOSA1 $1,365.72 | Infineon Technologies | IGBT MOD 6500V 250A 4800W | Bulk,Tray | Module | Chassis Mount | - | -50°C ~ 125°C |
![]() FD300R06KE3HOSA1 $81.63 | Infineon Technologies | IGBT MOD 600V 400A 940W | Bulk,Tray | Module | Chassis Mount | C | -40°C ~ 150°C |
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