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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FD400R12KE3HOSA1 $129.92 | Infineon Technologies | IGBT MOD 1200V 580A 2000W | Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
![]() FD400R16KF4 $358.62 | Infineon Technologies | IGBT MODULE | Bulk | - | Chassis Mount | - | 150°C (TJ) |
![]() FD400R33KF2CKNOSA1 $1,232.04 | Infineon Technologies | IGBT MOD 3300V 660A 4800W | Bulk,Bulk | Module | Chassis Mount | - | -40°C ~ 125°C |
![]() FD400R33KF2CNOSA1 $1,232.04 | Infineon Technologies | FD400R33 - IGBT MODULE | Bulk | - | - | * | - |
| Infineon Technologies | IGBT MOD 1700V 650A 3150W | Bulk | Module | Chassis Mount | - | -40°C ~ 125°C | |
![]() FD401R17KF6CB2NOSA1 $587.32 | Infineon Technologies | FD401R17 - IGBT MODULE | Bulk | - | - | * | - |
![]() FD450R12KE4HPSA1 $116.31 | Infineon Technologies | MEDIUM POWER 62MM | Tray | - | Chassis Mount | C | -40°C ~ 150°C (TJ) |
![]() FD450R12KE4PHOSA1 $119.94 | Infineon Technologies | IGBT MODULE 1200V 450A AG62MM-1 | Tray | AG-62MM-1 | Chassis Mount | C | -40°C ~ 150°C |
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