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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FD1200R12IE4B1S1BDMA1 $957.75 | Infineon Technologies | FD1200R12IE4B1S1BD - IGBT | Bulk | - | - | * | - |
| Infineon Technologies | FD1200R17 - IGBT MODULE | Bulk | AG-IHVB130-3 | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
![]() FD1200R17HP4KB2BOSA2 $904.21 | Infineon Technologies | IGBT MODULE 1700V 1200A | Tray | AG-IHVB130-3 | Chassis Mount | IHM-B | -40°C ~ 150°C (TJ) |
| Infineon Technologies | IGBT MODULE 1700V 1200A | Tray | Module | Chassis Mount | IHM-B | -40°C ~ 125°C (TJ) | |
![]() FD1200R17KE3KNOSA1 $807.18 | Infineon Technologies | IGBT MOD 1700V 1600A 5950W | Tray | Module | Chassis Mount | EconoPACK™ 4 | -40°C ~ 125°C |
| Infineon Technologies | IGBT MOD 1200V 1400A 7700W | Tray | Module | Chassis Mount | PrimePACK™3 | -40°C ~ 150°C | |
![]() FD150R12RT4HOSA1 $80.16 | Infineon Technologies | IGBT MOD 1200V 150A 790W | Tray | Module | Chassis Mount | C | -40°C ~ 150°C (TJ) |
![]() FD16001200R17HP4B2BOSA2 $1,199.55 | Infineon Technologies | IGBT MODULE VCES 1700V 1600A | Tray | Module | Chassis Mount | IHM-B | -40°C ~ 150°C |
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STGB20H65FB2View Product
IXA40PG1200DHG-TRRView Product
DF900R12IP4DBOSA1View Product
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