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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | IGBT MOD 1200V 40A 215W | Bulk | Module | Chassis Mount | PrimePACK™2 | -40°C ~ 125°C | |
![]() FD1000R17IE4BOSA2 $406.93 | Infineon Technologies | IGBT MODULE 1700V 6250W | Bulk,Tray | Module | Chassis Mount | PrimePACK™3 | -40°C ~ 150°C |
![]() FD1000R17IE4DB2BOSA1 $460.18 | Infineon Technologies | IGBT MOD 1700V 1390A 6250W | Bulk,Tray | Module | Chassis Mount | PrimePACK™3 | -40°C ~ 150°C |
| Infineon Technologies | IHV IHM T XHP 3 3-6 5K AG-IHVB19 | Tray | AG-IHVB190-3 | Chassis Mount | IHM-B | -40°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT MODULE 3300V 1000A | Tray | - | Chassis Mount | IHM-B | -40°C ~ 150°C | |
![]() FD1000R33HE3KBPSA1 $1,385.67 | Infineon Technologies | IGBT MODULE 3300V 1000A | Tray | Module | Chassis Mount | IHM-B | -40°C ~ 150°C |
| Infineon Technologies | IHV IHM T XHP 3 3-6 5K AG-IHVB19 | Tray | AG-IHVB190 | Chassis Mount | IHM-B | -40°C ~ 150°C (TJ) | |
![]() FD1000R33HL3KBPSA1 $1,740.88 | Infineon Technologies | IGBT MODULE 3300V 1000A | Bulk,Tray | Module | Chassis Mount | IHM-B | -40°C ~ 150°C |
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