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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | IGBT MOD 1200V 100A 500W | Bulk | Module | Chassis Mount | EconoPACK™ 2 | -40°C ~ 125°C | |
![]() F475R12KS4B11BPSA1 $79.45 | Infineon Technologies | LOW POWER ECONO AG-ECONO2B-211 | Tray | AG-ECONO2C | Chassis Mount | EconoPACK™ 2 | -40°C ~ 125°C (TJ) |
| Infineon Technologies | IGBT MOD 1200V 100A 500W | Bulk | Module | Chassis Mount | - | -40°C ~ 125°C | |
![]() F475R12KS4BPSA1 $82.41 | Infineon Technologies | LOW POWER ECONO AG-ECONO2B-211 | Tray | AG-ECONO2B | Chassis Mount | - | -40°C ~ 125°C (TJ) |
![]() F475R17N3E7B58BPSA1 $102.04 | Infineon Technologies | F475R17N3E7B58BPSA1 | Tray | - | - | - | - |
![]() F48MR12W2M1HB70BPSA1 $154.11 | Infineon Technologies | LOW POWER EASY | Tray | - | - | - | - |
![]() F48MR12W2M1HPB76BPSA1 $152.21 | Infineon Technologies | LOW POWER EASY | Tray | - | - | - | - |
| Infineon Technologies | IGBT MODULE 600V 75A 250W | Tray | Module | Chassis Mount | EconoPACK™ 3 | -40°C ~ 150°C |
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FF600R12IE4BOSA1View Product
NXH80T120L2Q0S2TGView Product
FP35R12W2T7PB11BPSA1View Product
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