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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FF100R12KS4HOSA1 $87.31 | Infineon Technologies | IGBT MOD 1200V 150A 780W | Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
![]() FF100R12RT4HOSA1 $80.62 | Infineon Technologies | IGBT MOD 1200V 100A 555W | Tray | Module | Chassis Mount | - | -40°C ~ 150°C |
![]() FF100R12YT3B60BOMA1 $45.25 | Infineon Technologies | FF100R12YT3B60BO- IGBT MOD 1.2kV | Bulk | - | Chassis Mount | - | -40°C ~ 125°C (TJ) |
![]() FF11MR12W2M1HB70BPSA1 $92.74 | Infineon Technologies | LOW POWER EASY | Tray | - | - | - | - |
![]() FF1200R12IE5BPSA1 $490.96 | Infineon Technologies | IGBT MOD 1200V 2400A 20MW | Tray | Module | Chassis Mount | PrimePACK™2 | -40°C ~ 175°C |
![]() FF1200R12IE5PBPSA1 $502.09 | Infineon Technologies | IGBT MOD 1200V 2400A 20MW | Tray | Module | Chassis Mount | PrimePACK™2 | -40°C ~ 175°C |
| Infineon Technologies | IGBT MODULE 1200V 5000W | Bulk | Module | Chassis Mount | - | -40°C ~ 125°C | |
![]() FF1200R17IP5BPSA1 $517.38 | Infineon Technologies | IGBT MOD 1700V 1200A 20MW | Bulk,Tray | Module | Chassis Mount | PrimePack™2 | -40°C ~ 175°C (TJ) |
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