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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FF1500R17IP5PBPSA1 $703.88 | Infineon Technologies | IGBT MOD 1700V 1500A AGPRIME3+-5 | Tray | AG-PRIME3+-5 | Chassis Mount | PrimePACK™3+ B | -40°C ~ 175°C |
![]() FF1500R17IP5RBPSA1 $654.59 | Infineon Technologies | PP IHM I XHP 1 7KV AG-PRIME3-5 | Bulk,Tray | Module | Chassis Mount | PrimePACK™3 | -40°C ~ 175°C (TJ) |
![]() FF150R12KE3B8BDLA1 $71.95 | Infineon Technologies | IGBT MODULE | Bulk | AG-62MM | Chassis Mount | - | -40°C ~ 125°C (TJ) |
| Infineon Technologies | MOD IGBT LOW PWR ECONO2-6 | Tray | - | - | - | - | |
![]() FF150R12KE3B8BPSA1 $48.03 | Infineon Technologies | LOW POWER ECONO AG-ECONO2B-311 | Tray | - | - | * | - |
![]() FF150R12KE3GB2HOSA1 $88.50 | Infineon Technologies | IGBT MODULE VCES 1200V 150A | Bulk,Tray | Module | Chassis Mount | C | -40°C ~ 125°C (TJ) |
![]() FF150R12KE3GHOSA1 $88.50 | Infineon Technologies | IGBT MOD 1200V 225A 780W | Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
![]() FF150R12KS4HOSA1 $102.57 | Infineon Technologies | IGBT MOD 1200V 225A 1250W | Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
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