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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FF200R12KT3EHOSA1 $93.33 | Infineon Technologies | IGBT MODULE 1200V 1050W | Bulk,Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
![]() FF200R12KT3HOSA1 $100.18 | Infineon Technologies | IGBT MODULE 1200V 1050W | Bulk,Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
![]() FF200R12KT4HOSA1 $78.88 | Infineon Technologies | IGBT MOD 1200V 320A 1100W | Tray | Module | Chassis Mount | C | -40°C ~ 150°C (TJ) |
| Infineon Technologies | IGBT MODULE 1200V 1050W | Bulk | Module | Chassis Mount | EconoDUAL™ 2 | -40°C ~ 150°C | |
![]() FF200R12W2T7EB11BPSA1 $48.65 | Infineon Technologies | FF200R12W2T7EB11BPSA1 | Tray | - | - | - | - |
![]() FF200R17KE3HOSA1 $122.99 | Infineon Technologies | IGBT MOD 1700V 310A 1250W | Tray | Module | Chassis Mount | C | -40°C ~ 125°C (TJ) |
![]() FF200R17KE3S4HOSA1 $108.95 | Infineon Technologies | IGBT MODULE VCES 1200V 200A | Bulk,Tray | Module | Chassis Mount | C | -40°C ~ 125°C (TJ) |
![]() FF200R17KE4HOSA1 $92.40 | Infineon Technologies | IGBT MOD 1700V 310A 1250W | Tray | Module | Chassis Mount | C | -40°C ~ 150°C |
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