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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FF225R65T3E3BPSA1 $1,352.52 | Infineon Technologies | IHV IHM T XHP 3 3-6 5K AG-XHP3K6 | Tray | AG-XHP3K65 | Chassis Mount | XHP™3 | 125°C (TJ) |
![]() FF225R65T3E3P2BPSA1 $1,360.17 | Infineon Technologies | IHV IHM T XHP 3 3-6 5K AG-XHP3K6 | Tray | AG-XHP3K65 | Chassis Mount | XHP™3 | 125°C (TJ) |
![]() FF225R65T3E3P3BPMA1 $1,367.82 | Infineon Technologies | IHV IHM T XHP 3 3-6 5K AG-XHP3K6 | Tray | AG-XHP3K65 | Chassis Mount | XHP™3 | 125°C (TJ) |
![]() FF225R65T3E3P4BPMA1 $1,375.47 | Infineon Technologies | IHV IHM T XHP 3 3-6 5K AG-XHP3K6 | Tray | AG-XHP3K65 | Chassis Mount | XHP™3 | 125°C (TJ) |
![]() FF225R65T3E3P5BPMA1 $1,406.07 | Infineon Technologies | IHV IHM T XHP 3 3-6 5K AG-XHP3K6 | Tray | AG-XHP3K65 | Chassis Mount | XHP™3 | 125°C (TJ) |
![]() FF225R65T3E3P6BPMA1 $1,390.77 | Infineon Technologies | IHV IHM T XHP 3 3-6 5K AG-XHP3K6 | Tray | AG-XHP3K65 | Chassis Mount | XHP™3 | 125°C (TJ) |
| Infineon Technologies | LOW POWER EASY AG-EASY1BM-2 | Tray | - | - | * | - | |
![]() FF2400R12IP7BPSA1 $707.37 | Infineon Technologies | IGBT MODULE | Bulk | - | - | - | - |
IRGP4050PBFView Product
FPF2C110BI07AS2View Product
MIO1800-17E10View Product
FF300R17ME4PB11BPSA1View Product
MMIX4B22N300View Product
MIXA60WB1200TEHView Product
MMIX4B20N300View Product
APT25GR120BView Product
IXA20PG1200DHG-TUBView Product
STGB5H60DFView Product
IXA40RG1200DHG-TRRView Product
HGTD10N40F1SView Product
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