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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FF300R12KE4HOSA1 $94.63 | Infineon Technologies | IGBT MOD 1200V 460A 1600W | Tray | Module | Chassis Mount | C | -40°C ~ 150°C |
![]() FF300R12KE4PHOSA1 $81.29 | Infineon Technologies | IGBT MODULE 1200V 300A | Tray | Module | Chassis Mount | C | -40°C ~ 150°C |
![]() FF300R12KS4HOSA1 $146.55 | Infineon Technologies | IGBT MOD 1200V 370A 1950W | Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
![]() FF300R12KS4PHOSA1 $150.92 | Infineon Technologies | IGBT MODULE 1200V 300A | Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
![]() FF300R12KT3EHOSA1 $108.15 | Infineon Technologies | IGBT MOD 1200V 480A 1450W | Bulk,Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
![]() FF300R12KT3HOSA1 $122.99 | Infineon Technologies | IGBT MOD 1200V 480A 1450W | Bulk,Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
![]() FF300R12KT3PEHOSA1 $112.57 | Infineon Technologies | IGBT MODULE 1200V 300A | Bulk,Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
![]() FF300R12KT4HOSA1 $96.48 | Infineon Technologies | IGBT MOD 1200V 450A 1600W | Tray | Module | Chassis Mount | C | -40°C ~ 150°C (TJ) |
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