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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT MODULE VCES 600V 600ATray--EconoDUAL™ 3-
Infineon TechnologiesMEDIUM POWER ECONOBulk,TrayAG-ECONOD-5Chassis MountEconoDUAL™ 3-40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT MODULE VCES 600V 600ATray--EconoDUAL™ 3-
Infineon TechnologiesMEDIUM POWER ECONOTrayAG-ECONODChassis MountEconoDUAL™ 3-40°C ~ 150°C (TJ)
Infineon TechnologiesECONODUAL 3 WITH TRENCHSTOP IGBTTrayAG-ECONODChassis MountEconoDUAL™ 3-40°C ~ 175°C (TJ)
Infineon TechnologiesMEDIUM POWER ECONO AG-ECONOD-741TrayAG-ECONODChassis MountEconoDUAL™ 3-40°C ~ 175°C (TJ)
Infineon TechnologiesMEDIUM POWER ECONOTray----
Infineon TechnologiesIGBT MODULE 1700V 4300WTrayModuleChassis Mount--40°C ~ 125°C
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