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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesPP IHM ITray-Chassis Mount--40°C ~ 150°C
Infineon TechnologiesIGBT MODULE 1700V 4150WTrayModuleChassis MountPrimePACK™2-40°C ~ 150°C
Infineon TechnologiesIGBT MODULE 1700V 4150WTrayModuleChassis MountPrimePACK™2-40°C ~ 150°C
Infineon TechnologiesIGBT MODULE 1700V 650ATrayModuleChassis MountPrimePACK™2-40°C ~ 150°C
Infineon TechnologiesPP IHM ITray-Chassis Mount--40°C ~ 150°C
Infineon TechnologiesFF650R17 - INSULATED GATE BIPOLABulk-Chassis MountPrimePACK™2-40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT MODULE 1700V 4150WTrayModuleChassis MountPrimePACK™2-40°C ~ 150°C
Infineon TechnologiesECONODUAL 3 WITH TRENCHSTOP IGBTTrayAG-ECONODChassis MountEconoDUAL™ 3-40°C ~ 175°C (TJ)
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