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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FF800R17KF6CB2NOSA2 $948.03 | Infineon Technologies | IGBT MODULE A-IHM130-1 | Bulk,Tray | - | - | IHM-A | - |
![]() FF800R17KP4B2NOSA2 $810.56 | Infineon Technologies | IGBT MODULE 1700V 800A | Tray | A-IHV130-3 | Chassis Mount | IHM-A | -40°C ~ 150°C (TJ) |
| Infineon Technologies | IGBT MODULE LOW POWER EASY | Tray | - | - | - | - | |
![]() FF900R12IE4BOSA1 $371.83 | Infineon Technologies | IGBT MOD 1200V 900A 5100W | Tray | Module | Chassis Mount | PrimePack™2 | -40°C ~ 150°C (TJ) |
![]() FF900R12IE4PBOSA1 $386.90 | Infineon Technologies | IGBT MOD 1200V 900A 20MW | Tray | Module | Chassis Mount | PrimePACK™2 | -40°C ~ 150°C |
![]() FF900R12IE4VBOSA1 $426.43 | Infineon Technologies | IGBT MOD 1200V 900A 5100W | Bulk,Tray | Module | Chassis Mount | PrimePACK™2 | -40°C ~ 150°C |
![]() FF900R12IE4VPBOSA1 $424.39 | Infineon Technologies | PP, IHM I, XHP 1,7KV | Bulk | - | - | * | - |
![]() FF900R12IP4B60BOSA1 $406.72 | Infineon Technologies | PP IHM I | Tray | - | Chassis Mount | - | -40°C ~ 150°C (TJ) |
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