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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT MODULE A-IHM130-1Bulk,Tray--IHM-A-
Infineon TechnologiesIGBT MODULE 1700V 800ATrayA-IHV130-3Chassis MountIHM-A-40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT MODULE LOW POWER EASYTray----
Infineon TechnologiesIGBT MOD 1200V 900A 5100WTrayModuleChassis MountPrimePack™2-40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT MOD 1200V 900A 20MWTrayModuleChassis MountPrimePACK™2-40°C ~ 150°C
Infineon TechnologiesIGBT MOD 1200V 900A 5100WBulk,TrayModuleChassis MountPrimePACK™2-40°C ~ 150°C
Infineon TechnologiesPP, IHM I, XHP 1,7KVBulk--*-
Infineon TechnologiesPP IHM ITray-Chassis Mount--40°C ~ 150°C (TJ)
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