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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FF800R12KE7HPSA1 $144.10 | Infineon Technologies | MEDIUM POWER 62MM AG-62MMHB-711 | Tray | AG-62MM | Chassis Mount | TRENCHSTOP™ | -40°C ~ 175°C (TJ) |
![]() FF800R12KE7PEHPSA1 $135.05 | Infineon Technologies | MEDIUM POWER 62MM | Tray | AG-62MMHB | Chassis Mount | - | - |
![]() FF800R12KE7PHPSA1 $135.05 | Infineon Technologies | MEDIUM POWER 62MM | Tray | AG-62MMHB | Chassis Mount | - | - |
| Infineon Technologies | IGBT MOD 1200V 800A 5000W | Bulk | Module | Chassis Mount | - | -40°C ~ 125°C | |
![]() FF800R12KL4CNOSA1 $671.32 | Infineon Technologies | IGBT MODULE 1200V 800A | Bulk,Tray | AG-PRIME2 | Chassis Mount | C | -40°C ~ 125°C (TJ) |
![]() FF800R17KE3B2NOSA1 $748.74 | Infineon Technologies | IGBT MODULE 1700V 800A | Bulk,Tray | A-IHV130-3 | Chassis Mount | IHM-B | -40°C ~ 125°C (TJ) |
![]() FF800R17KE3NOSA1 $711.61 | Infineon Technologies | IGBT MODULE 1700V 4450W | Tray | Module | Chassis Mount | - | -40°C ~ 125°C |
| Infineon Technologies | IGBT MODULE 1700V 6250W | Bulk | Module | Chassis Mount | IHM-A | -40°C ~ 125°C |
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