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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesMEDIUM POWER ECONOTrayAG-ECONODChassis MountEconoDUAL™ 3-40°C ~ 175°C
Infineon TechnologiesMEDIUM POWER ECONOTrayAG-ECONODChassis MountEconoDUAL™, TRENCHSTOP™-40°C ~ 175°C (TJ)
Infineon TechnologiesMEDIUM POWER ECONOTray-Chassis MountEconoDUAL™ 3-40°C ~ 175°C (TJ)
Infineon TechnologiesFF900R17ME7CBPSA1Tray-Chassis MountEconoDUAL™3-40°C ~ 175°C (TJ)
Infineon TechnologiesMEDIUM POWER ECONOTray--*-
Infineon TechnologiesMEDIUM POWER ECONOTrayAG-ECONODChassis Mount--40°C ~ 175°C (TJ)
Fairchild SemiconductorIGBT 300V 120A TO-3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
onsemiIGBT NPT 1200V 24A TO-3PNTubeTO-3PNThrough Hole--55°C ~ 150°C (TJ)
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