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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FF900R12ME7PB11BPSA1 $173.68 | Infineon Technologies | MEDIUM POWER ECONO | Tray | AG-ECONOD | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 175°C |
![]() FF900R12ME7WB11BPSA1 $189.35 | Infineon Technologies | MEDIUM POWER ECONO | Tray | AG-ECONOD | Chassis Mount | EconoDUAL™, TRENCHSTOP™ | -40°C ~ 175°C (TJ) |
![]() FF900R17ME7B11BPSA1 $226.89 | Infineon Technologies | MEDIUM POWER ECONO | Tray | - | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 175°C (TJ) |
![]() FF900R17ME7CBPSA1 $235.34 | Infineon Technologies | FF900R17ME7CBPSA1 | Tray | - | Chassis Mount | EconoDUAL™3 | -40°C ~ 175°C (TJ) |
![]() FF900R17ME7PB11BPSA1 $226.91 | Infineon Technologies | MEDIUM POWER ECONO | Tray | - | - | * | - |
![]() FF900R17ME7WB11BPSA1 $284.63 | Infineon Technologies | MEDIUM POWER ECONO | Tray | AG-ECONOD | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() FGA120N30DTU $1.29 | Fairchild Semiconductor | IGBT 300V 120A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT NPT 1200V 24A TO-3PN | Tube | TO-3PN | Through Hole | - | -55°C ~ 150°C (TJ) |
F3L11MR12W2M1HPB19BPSA1View Product
FII24N17AH1View Product
CM200RX-12AView Product
FP50R12KT3BOSA1View Product
NGTB30N135IHR1WGView Product
MMIX4G20N250View Product
FII24N17AH1SView Product
FGHL50T65MQDTL4View Product
AOMU66464QView Product
NGTG15N120FL2WGView Product
RJP60V0DPM-00#T1View Product
NXH200T120H3Q2F2STNGView Product
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