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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FGA15N120ANTDTU $1.46 | onsemi | IGBT NPT/TRENCH 1200V 30A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT NPT/TRENCH 1200V 30A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) | |
| onsemi | IGBT TRENCH FS 1200V 30A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) | |
| onsemi | IGBT TRENCH 1250V 30A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) | |
![]() FGA180N30DTU $3.71 | Fairchild Semiconductor | IGBT 300V 180A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT TRENCH 330V 180A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) | |
| onsemi | IGBT TRENCH FS 1200V 40A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() FGA20S120M $1.91 | Fairchild Semiconductor | IGBT TRENCH FS 1200V 40A TO-3P | Bulk | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
F3L11MR12W2M1HPB19BPSA1View Product
FII24N17AH1View Product
CM200RX-12AView Product
FP50R12KT3BOSA1View Product
NGTB30N135IHR1WGView Product
MMIX4G20N250View Product
FII24N17AH1SView Product
FGHL50T65MQDTL4View Product
AOMU66464QView Product
NGTG15N120FL2WGView Product
RJP60V0DPM-00#T1View Product
NXH200T120H3Q2F2STNGView Product
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