Product categories

Filter by price :
IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Screen Default Ranking Price By Date
Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT NPT/TRENCH 1200V 30A TO-3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
onsemiIGBT NPT/TRENCH 1200V 30A TO-3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
onsemiIGBT TRENCH FS 1200V 30A TO-3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
onsemiIGBT TRENCH 1250V 30A TO-3PTubeTO-3PThrough Hole--55°C ~ 175°C (TJ)
Fairchild SemiconductorIGBT 300V 180A TO-3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
onsemiIGBT TRENCH 330V 180A TO-3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
onsemiIGBT TRENCH FS 1200V 40A TO-3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT TRENCH FS 1200V 40A TO-3PBulkTO-3PThrough Hole--55°C ~ 175°C (TJ)
Add ComparisonUp to 4 can be added

    Recommended Products

    Recent News