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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FGA20S125P $1.67 | onsemi | IGBT TRENCH FS 1250V 40A TO-3PN | Tube | TO-3PN | Through Hole | - | - |
![]() FGA20S125P-SN00336 $3.38 | onsemi | IGBT TRENCH 1250V 40A TO-3PN | Tube,Tube | TO-3PN | Through Hole | - | -55°C ~ 175°C (TJ) |
| onsemi | IGBT TRENCH FS 1400V 40A TO-3PN | Tube | TO-3PN | Through Hole | - | -55°C ~ 175°C (TJ) | |
![]() FGA25N120ANDTU $2.00 | onsemi | IGBT NPT 1200V 40A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT NPT/TRENCH 1200V 50A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) | |
| onsemi | IGBT NPT/TRENCH 1200V 50A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() FGA25N120ANTU $2.52 | onsemi | IGBT NPT 1200V 40A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT TRENCH FS 1200V 50A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
MMIX4B22N300View Product
APTGT200A170D3GView Product
SGH15N120RUFTUView Product
FII24N17AH1View Product
FS75R07N2E4BOSA1View Product
IRGP4760D-EPBFView Product
AIMBG75R040M1HXTMA1View Product
IXA30PG1200DHG-TRRView Product
IXA20PG1200DHG-TUBView Product
FS200R07N3E4RPBPSA1View Product
IRGP4740D-EPBFView Product
A1P50S65M2-FView Product
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