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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT NPT/TRENCH 1000V 50A TO-3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
onsemiIGBT NPT/TRENCH 1000V 50A TO-3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT NPT/TRENCH 1000V 50A TO-3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
onsemiIGBT 600V 100A TO-3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT TRENCH FS 1100V 50A TO-3PNBulkTO-3PNThrough Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 650V 100A TO-3PNTubeTO-3PNThrough Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 650V 120A TO-3PNTubeTO-3PNThrough Hole--55°C ~ 175°C (TJ)
onsemiIGBT FIELD STOP 600V 120A TO-3PNTubeTO-3PNThrough Hole--55°C ~ 150°C (TJ)
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