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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| onsemi | IGBT NPT/TRENCH 1000V 50A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) | |
| onsemi | IGBT NPT/TRENCH 1000V 50A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() FGA50N100BNTTU $2.21 | Fairchild Semiconductor | IGBT NPT/TRENCH 1000V 50A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() FGA50N60LS $3.26 | onsemi | IGBT 600V 100A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() FGA50S110P $1.41 | Fairchild Semiconductor | IGBT TRENCH FS 1100V 50A TO-3PN | Bulk | TO-3PN | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGA50T65SHD $4.74 | onsemi | IGBT TRENCH FS 650V 100A TO-3PN | Tube | TO-3PN | Through Hole | - | -55°C ~ 175°C (TJ) |
| onsemi | IGBT TRENCH FS 650V 120A TO-3PN | Tube | TO-3PN | Through Hole | - | -55°C ~ 175°C (TJ) | |
| onsemi | IGBT FIELD STOP 600V 120A TO-3PN | Tube | TO-3PN | Through Hole | - | -55°C ~ 150°C (TJ) |
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