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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FGA90N30TU $0.98 | Fairchild Semiconductor | IGBT 300V 90A TO3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() FGA90N33ATDTU $1.28 | onsemi | IGBT TRENCH 330V 90A TO3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() FGA90N33ATTU $1.45 | onsemi | IGBT TRENCH 330V 90A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() FGAF20N60SMD $1.84 | Fairchild Semiconductor | INSULATED GATE BIPOLAR TRANSISTO | Bulk | - | - | * | - |
![]() FGAF20S65AQ $1.29 | onsemi | IGBT TRENCH FS 650V 40A TO-3PF-3 | Bulk,Bulk,Tube | TO-3PF-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
| onsemi | IGBT TRENCH FS 650V 60A TO-3PF-3 | Tube | TO-3PF-3 | Through Hole | - | -55°C ~ 175°C (TJ) | |
![]() FGAF40N60SMD $4.94 | onsemi | IGBT FIELD STOP 600V 80A TO-3PF | Tube | TO-3PF | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGAF40N60UFDTU $2.11 | Fairchild Semiconductor | IGBT 600V 40A TO-3PF | Bulk | TO-3PF | Through Hole | - | -55°C ~ 150°C (TJ) |
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