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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Fairchild SemiconductorIGBT 300V 90A TO3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
onsemiIGBT TRENCH 330V 90A TO3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
onsemiIGBT TRENCH 330V 90A TO-3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOBulk--*-
onsemiIGBT TRENCH FS 650V 40A TO-3PF-3Bulk,Bulk,TubeTO-3PF-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 650V 60A TO-3PF-3TubeTO-3PF-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT FIELD STOP 600V 80A TO-3PFTubeTO-3PFThrough Hole--55°C ~ 175°C (TJ)
Fairchild SemiconductorIGBT 600V 40A TO-3PFBulkTO-3PFThrough Hole--55°C ~ 150°C (TJ)
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