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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FGA60N65SMD $5.56 | onsemi | IGBT FIELD STOP 650V 120A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGA6530WDF $1.79 | onsemi | IGBT TRENCH FS 650V 60A TO-3PN | Tube,Tube | TO-3PN | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGA6540WDF $1.46 | onsemi | IGBT TRENCH FS 650V 80A TO-3PN | Tube,Tube,Tube | TO-3PN | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGA6560WDF $2.35 | onsemi | IGBT TRENCH FS 650V 120A TO-3PN | Bulk,Tube,Tube | TO-3PN | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGA70N30TDTU $1.50 | Fairchild Semiconductor | IGBT TRENCH 300V TO-3PN | Tube | TO-3PN | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() FGA70N30TTU $2.14 | Fairchild Semiconductor | IGBT TRENCH 300V TO-3PN | Tube | TO-3PN | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT TRENCH 330V TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() FGA90N30DTU $2.14 | Fairchild Semiconductor | IGBT, 90A, 300V, N-CHANNEL | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
HGT1N40N60A4DView Product
AOMU66464QView Product
IXGR16N170AH1View Product
VS-GA200SA60UPView Product
HKW40N120FHEQView Product
IXA40RG1200DHG-TUBView Product
IXA20PG1200DHG-TUBView Product
STGW80H65FBView Product
IXXN200N60C3H1View Product
FII24N17AH1View Product
FGAF30S65AQView Product
FF1000R17IE4DB2S4BOSA2View Product
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