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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FF600R12KT4HOSA1 $139.15 | Infineon Technologies | 62MM POWER MODULE 1200 V WITH IG | Bulk,Tray | AG-62MM | Chassis Mount | C | -40°C ~ 150°C (TJ) |
![]() FF600R12ME4AB11BOSA1 $213.97 | Infineon Technologies | IGBT MODULE 1200V 3350W | Bulk,Bulk | Module | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 150°C |
| Infineon Technologies | MEDIUM POWER ECONO AG-ECONOD-411 | Tray | AG-ECONOD | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT MODULE 1200V 4050W | Bulk | Module | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 150°C | |
![]() FF600R12ME4B11BPSA2 $202.60 | Infineon Technologies | MEDIUM POWER ECONO AG-ECONOD-411 | Tray | AG-ECONOD | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 150°C (TJ) |
![]() FF600R12ME4B72BOSA1 $150.88 | Infineon Technologies | IGBT MOD 1200V 1200A 20MW | Tray | Module | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 150°C |
| Infineon Technologies | IGBT MOD 1200V 1200A 20MW | Tray | Module | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 150°C | |
![]() FF600R12ME4B73BPSA2 $138.49 | Infineon Technologies | MEDIUM POWER ECONO AG-ECONOD-411 | Tray | AG-ECONOD | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 150°C (TJ) |
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