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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FF600R12KE4EBOSA1 $142.86 | Infineon Technologies | IGBT MODULE 1200V 600A | Tray | Module | Chassis Mount | C | -40°C ~ 150°C |
![]() FF600R12KE4EBOSA2 $533.61 | Infineon Technologies | FF600R12KE4_E - 1200 V, 600 A CO | Bulk | - | - | * | - |
![]() FF600R12KE4PBOSA1 $149.24 | Infineon Technologies | IGBT MODULE 1200V | Tray | AG-62MM-1 | Chassis Mount | C | -40°C ~ 150°C (TJ) |
![]() FF600R12KE7BPSA1 $114.67 | Infineon Technologies | MEDIUM POWER 62MM | Tray | AG-62MMHB | Chassis Mount | C | -40°C ~ 175°C (TJ) |
![]() FF600R12KE7EHPSA1 $132.36 | Infineon Technologies | MEDIUM POWER 62MM | Tray | AG-62MMHB | Chassis Mount | C | -40°C ~ 175°C (TJ) |
![]() FF600R12KE7PEHPSA1 $118.49 | Infineon Technologies | MEDIUM POWER 62MM | Tray | AG-62MMHB | Chassis Mount | C, TRENCHSTOP™ | -40°C ~ 175°C (TJ) |
![]() FF600R12KE7PHPSA1 $118.49 | Infineon Technologies | MEDIUM POWER 62MM | Tray | AG-62MMHB | Chassis Mount | C, TRENCHSTOP™ | -40°C ~ 175°C (TJ) |
![]() FF600R12KF4NOSA1 $527.40 | Infineon Technologies | IGBT MODULE | Bulk | - | Chassis Mount | - | 150°C (TJ) |
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