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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FF5MR20KM1HPHPSA1 $291.96 | Infineon Technologies | MEDIUM POWER 62MM | Tray | - | - | - | - |
![]() FF600R06ME3BOSA1 $155.16 | Infineon Technologies | IGBT MOD 600V 700A 1650W | Tray | Module | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 150°C |
| Infineon Technologies | IGBT MOD 650V 700A 1800W | Bulk | Module | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 150°C | |
![]() FF600R07ME4B11BPSA1 $101.99 | Infineon Technologies | MEDIUM POWER ECONO | Tray | AG-ECONOD-3 | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 150°C (TJ) |
![]() FF600R07ME4BPSA1 $116.30 | Infineon Technologies | GBT MODULE 650V 600A | Tray | AG-ECONOD-4 | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 150°C (TJ) |
![]() FF600R12IE4BOSA1 $299.20 | Infineon Technologies | IGBT MOD 1200V 600A 3350W | Tray | Module | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() FF600R12IE4PNOSA1 $310.53 | Infineon Technologies | IGBT MOD 1200V 600A 3350W | Bulk,Tray | Module | Chassis Mount | PrimePACK™2 | -40°C ~ 150°C |
![]() FF600R12IE4VBOSA1 $345.74 | Infineon Technologies | PP, IHM I, XHP 1,7KV | Bulk | - | Chassis Mount | PrimePACK™2 | -40°C ~ 150°C (TJ) |
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