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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FF600R12IP4B60BPSA1 $356.74 | Infineon Technologies | PP IHM I | Tray | - | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() FF600R12IP4BOSA1 $296.63 | Infineon Technologies | IGBT MOD 1200V 600A 3350W | Tray | Module | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() FF600R12IP4PB60BPSA1 $372.67 | Infineon Technologies | PP IHM I | Tray | - | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() FF600R12IP4PBPSA1 $289.26 | Infineon Technologies | PP IHM I XHP 1 7KV AG-PRIME2-411 | Tray | AG-PRIME2 | Chassis Mount | PrimePACK™2 | -40°C ~ 150°C (TJ) |
![]() FF600R12IP4VBOSA1 $345.74 | Infineon Technologies | IGBT MOD 1200V 600A 3350W | Bulk,Tray | Module | Chassis Mount | PrimePACK™2 | -40°C ~ 150°C |
![]() FF600R12IS4FBOSA1 $329.11 | Infineon Technologies | PP, IHM I, XHP 1,7KV | Bulk | - | - | * | - |
![]() FF600R12KE3NOSA1 $533.61 | Infineon Technologies | IGBT MODULE 1200V 600A | Bulk,Tray | Module | Chassis Mount | C | -40°C ~ 125°C (TJ) |
![]() FF600R12KE4BOSA1 $145.37 | Infineon Technologies | IGBT MODULE 1200V 600A | Tray | Module | Chassis Mount | C | -40°C ~ 150°C |
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