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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Panasonic Electronic Components | MOSFET N-CH 50V 100MA SMINI3-F2 | Tape & Reel (TR) | SSMini3-F3 | Surface Mount | - | 125°C (TJ) | |
| Panasonic Electronic Components | MOSFET N-CH 50V 100MA SSMINI3-F1 | Tape & Reel (TR) | SSMini3-F1 | Surface Mount | - | 125°C (TJ) | |
![]() 2SK354700L $0.36 | Panasonic Electronic Components | MOSFET N-CH 50V 100MA SSSMINI3 | Tape & Reel (TR),Cut Tape (CT) | SSSMini3-F1 | Surface Mount | - | 125°C (TJ) |
![]() 2SK3547G0L $0.11 | Panasonic Electronic Components | MOSFET N-CH 50V 100MA SSSMINI3 | Tape & Reel (TR) | SSSMini3-F2 | Surface Mount | - | 125°C (TJ) |
![]() 2SK3564(STA4,Q,M) $1.79 | Toshiba Semiconductor and Storage | MOSFET N-CH 900V 3A TO220SIS | Tube | TO-220SIS | Through Hole | π-MOSIV | 150°C (TJ) |
| Toshiba Semiconductor and Storage | MOSFET N-CH 900V 5A TO220SIS | Bulk | TO-220SIS | Through Hole | π-MOSIV | 150°C (TJ) | |
![]() 2SK3566(STA4,Q,M) $1.82 | Toshiba Semiconductor and Storage | MOSFET N-CH 900V 2.5A TO220SIS | Tube | TO-220SIS | Through Hole | π-MOSIV | 150°C (TJ) |
![]() 2SK3570-ZK-E1-AZ $1.02 | Renesas Electronics Corporation | POWER FIELD-EFFECT TRANSISTOR | Bulk | - | - | * | - |