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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Microsemi Corporation | MOSFET N-CH 100V 3.5A TO39 | Bulk | TO-39 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Microsemi Corporation | MOSFET N-CH 100V 3.5A 18ULCC | Bulk | 18-ULCC (9.14x7.49) | Surface Mount | - | -55°C ~ 150°C (TJ) | |
| Microsemi Corporation | MOSFET N-CH 200V 2.25A TO39 | Bulk | TO-39 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() 2N6787 $2.87 | International Rectifier | POWER FIELD-EFFECT TRANSISTOR, N | Bulk | TO-205AF (TO-39) | Through Hole | - | - |
| Microsemi Corporation | MOSFET N-CH 100V 6A TO39 | Bulk | TO-39 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Microsemi Corporation | MOSFET N-CH 200V 3.5A TO39 | Bulk | TO-39 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() 2N6792 $1.28 | Harris Corporation | N-CHANNEL POWER MOSFET | Bulk | TO-205AF (TO-39) | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() 2N6792TX $6.81 | Harris Corporation | 2A, 400V, 1.8OHM, N-CHANNEL | Bulk | TO-205AF (TO-39) | Through Hole | - | -55°C ~ 150°C (TJ) |

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