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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Vishay Siliconix | MOSFET N-CH 60V 990MA TO205AD | Tube | TO-205AD (TO-39) | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() 2N6660JTXP02 $175.95 | Vishay Siliconix | MOSFET N-CH 60V 990MA TO205AD | Tube | TO-205AD (TO-39) | Through Hole | - | -55°C ~ 150°C (TJ) |
| Vishay Siliconix | MOSFET N-CH 60V 990MA TO205AD | Tube | TO-205AD (TO-39) | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() 2N6661 $13.52 | Microchip Technology | MOSFET N-CH 90V 350MA TO39 | Bag | TO-39 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() 2N6661 $25.50 | Vishay Siliconix | MOSFET N-CH 90V 860MA TO39 | Tube | TO-39 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() 2N6661-2 $104.13 | Vishay Siliconix | MOSFET N-CH 90V 860MA TO39 | Tube | TO-39 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() 2N6661-E3 $25.50 | Vishay Siliconix | MOSFET N-CH 90V 860MA TO39 | Tube | TO-39 | Through Hole | - | -55°C ~ 150°C (TJ) |
| Vishay Siliconix | MOSFET N-CH 90V 860MA TO39 | Tube | TO-39 | Through Hole | - | -55°C ~ 150°C (TJ) |

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