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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Microsemi Corporation | MOSFET N-CH 500V 4.5A TO204AA | Bulk | TO-204AA | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Microsemi Corporation | MOSFET N-CH 100V 38A TO3 | Bulk | TO-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Microsemi Corporation | MOSFET N-CH 100V 38A TO3 | Bulk | TO-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Microsemi Corporation | MOSFET N-CH 200V 30A TO3 | Bulk | TO-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Microsemi Corporation | MOSFET N-CH 400V 14A TO3 | Bulk | TO-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Microsemi Corporation | MOSFET N-CH 400V 14A TO254AA | Bulk | TO-254AA | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Microsemi Corporation | MOSFET N-CH 500V 12A TO3 | Bulk | TO-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Microsemi Corporation | MOSFET N-CH 500V 12A TO254AA | Bulk | TO-254AA | Through Hole | - | -55°C ~ 150°C (TJ) |

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