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Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APT8020B2LLG $29.27 | Microchip Technology | MOSFET N-CH 800V 38A T-MAX | Tube | T-MAX™ [B2] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT8020JFLL $36.23 | Microchip Technology | MOSFET N-CH 800V 33A ISOTOP | Tube | ISOTOP® | Chassis Mount | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT8020JLL $38.02 | Microchip Technology | MOSFET N-CH 800V 33A ISOTOP | Tube | ISOTOP® | Chassis Mount | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT8020LFLLG $36.39 | Microchip Technology | MOSFET N-CH 800V 38A TO264 | Tube | TO-264 [L] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT8020LLLG $27.34 | Microchip Technology | MOSFET N-CH 800V 38A TO264 | Tube | TO-264 [L] | Through Hole | POWER MOS 7® | - |
![]() APT8024B2LLG $22.02 | Microsemi Corporation | MOSFET N-CH 800V 31A T-MAX | Tube | T-MAX™ [B2] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT8024JLL $33.46 | Microchip Technology | MOSFET N-CH 800V 29A ISOTOP | Tube | ISOTOP® | Chassis Mount | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT8024LFLLG $23.49 | Microchip Technology | MOSFET N-CH 800V 31A TO264 | Tube | TO-264 [L] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |

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