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Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | MOSFET N-CH 55V 135A D2PAK | Tube | D2PAK | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) | |
![]() AUIRF2805STRL $1.57 | International Rectifier | MOSFET N-CH 55V 135A D2PAK | Bulk | D2PAK | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) |
| Infineon Technologies | MOSFET N-CH 75V 75A TO220AB | Tube | TO-220AB | Through Hole | HEXFET® | -55°C ~ 175°C (TJ) | |
![]() AUIRF2807 $1.14 | International Rectifier | AUTOMOTIVE HEXFET N CHANNEL | Bulk | TO-220AB | Through Hole | HEXFET® | -55°C ~ 175°C (TJ) |
| Infineon Technologies | MOSFET N-CH 30V 160A TO220AB | Tube | TO-220AB | Through Hole | HEXFET® | -55°C ~ 175°C (TJ) | |
![]() AUIRF2903Z $1.68 | International Rectifier | MOSFET N-CH 30V 160A TO220AB | Bulk | TO-220AB | Through Hole | HEXFET® | -55°C ~ 175°C (TJ) |
| Infineon Technologies | MOSFET N-CH 30V 160A TO262 | Tube | TO-262 | Through Hole | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET N-CH 30V 160A D2PAK | Tube | D2PAK | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) |
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